RHEED intensity oscillations observed during the MBE growth of InSb(100)DROOPAD, R; WILLIAMS, R. L; PARKER, S. D et al.Semiconductor science and technology. 1989, Vol 4, Num 2, pp 111-113, issn 0268-1242Article

A GaAs/AlGaAs asymmetric Fabry-Perot reflection modulator with very high contrast ratioGERBER, D. S; DROOPAD, R; MARACAS, G. N et al.IEEE photonics technology letters. 1993, Vol 5, Num 1, pp 55-58, issn 1041-1135Article

Comparison of electroabsorption in asymmetric triangular and rectangular GaAs/Al_xGa_1-xAs multiple quantum wellsGERBER, D. S; DROOPAD, R; MARACAS, G. N et al.Applied physics letters. 1993, Vol 62, Num 5, pp 525-527, issn 0003-6951Article

1 μm gate length, In_0.75Ga_0.25As channel, thin body n-MOSFET on InP substrate with transconductance of 737 μS/μmHILL, R. J. W; DROOPAD, R; FEJES, P et al.Electronics Letters. 2008, Vol 44, Num 7, pp 498-500, issn 0013-5194, 3 p.Article

Development of high dielectric constant epitaxial oxides on silicon by molecular beam epitaxyDROOPAD, R; YU, Z; RAMDANI, J et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2001, Vol 87, Num 3, pp 292-296, issn 0921-5107Conference Paper

The (3 × 2) phase of Ba adsorption on Si(001)-2 × 1HU, X; YAO, X; PETERSON, C. A et al.Surface science. 2000, Vol 445, Num 2-3, pp 256-266, issn 0039-6028Article

Narrow photoluminescence linewidth of quantum wells grown by gas source molecular beam epitaxySHIRALAGI, K. T; PUECHNER, R. A; CHOI, K. Y et al.Journal of crystal growth. 1991, Vol 114, Num 3, pp 337-345, issn 0022-0248Article

An Ultralow-Resistance Ultrashallow Metallic Source/Drain Contact Scheme for III―V NMOSOXLAND, R; CHANG, S. W; BHUWALKA, K et al.IEEE electron device letters. 2012, Vol 33, Num 4, pp 501-503, issn 0741-3106, 3 p.Article

Structure of V thin films on Al(100) using XPD, LEED, and LEISPRIYANTHA, W; DROOPAD, R; KOPCZYK, M et al.Surface science. 2012, Vol 606, Num 15-16, pp 1160-1166, issn 0039-6028, 7 p.Article

In-situ XPS and RHEED study of gallium oxide on GaAs deposition by molecular beam epitaxyPRIYANTHA, W; RADHAKRISHNAN, G; DROOPAD, R et al.Journal of crystal growth. 2011, Vol 323, Num 1, pp 103-106, issn 0022-0248, 4 p.Conference Paper

Gate dielectrics on compound semiconductorsDROOPAD, R; PASSLACK, M; ENGLAND, N et al.Microelectronic engineering. 2005, Vol 80, pp 138-145, issn 0167-9317, 8 p.Conference Paper

Comparative study of Sr and Ba adsorption on Si(1 0 0)XIAOMING HU; YU, Z; CURLESS, J. A et al.Applied surface science. 2001, Vol 181, Num 1-2, pp 103-110, issn 0169-4332Article

Low temperature GaAs grown by gas source molecular beam epitaxyDROOPAD, R; SHIRALAGI, K. T; PUECHNER, R. A et al.Journal of crystal growth. 1992, Vol 120, Num 1-4, pp 200-205, issn 0022-0248Conference Paper

Optical properties of a single strained InGaAs/GaAs quantum well grown on vicinal GaAs surfacesDROOPAD, R; PUECHNER, R. A; SHIRALAGI, K. T et al.Applied physics letters. 1991, Vol 58, Num 16, pp 1777-1779, issn 0003-6951, 3 p.Article

Growth of heterostructures on InAs for high mobility device applicationsCONTRERAS-GUERRERO, R; WANG, S; VAN DAL, M et al.Journal of crystal growth. 2013, Vol 378, pp 117-120, issn 0022-0248, 4 p.Conference Paper

Screening of Oxide/GaAs Interfaces for MOSFET ApplicationsPASSLACK, M; DROOPAD, R; YU, Z et al.IEEE electron device letters. 2008, Vol 29, Num 11, pp 1181-1183, issn 0741-3106, 3 p.Article

Compound semiconductor MOSFETsDROOPAD, R; RAJAGOPALAN, K; ABROKWAH, J et al.Microelectronic engineering. 2007, Vol 84, Num 9-10, pp 2138-2141, issn 0167-9317, 4 p.Conference Paper

Monte Carlo simulations of InGaAs nano-MOSFETsKALNA, K; DROOPAD, R; PASSLACK, M et al.Microelectronic engineering. 2007, Vol 84, Num 9-10, pp 2150-2153, issn 0167-9317, 4 p.Conference Paper

Interface characterization of high-quality SrTiO₃ thin films on Si(100) substrates grown by molecular beam epitaxyRAMDANI, J; DROOPAD, R; ALLURI, P et al.Applied surface science. 2000, Vol 159-60, pp 127-133, issn 0169-4332Conference Paper

Low resistance Pd/Ge ohmic contacts to epitaxially lifted-off n-type GaAs filmFATHOLLAHNEJAD, H; RAJESH, R; LIU, J et al.Journal of electronic materials. 1995, Vol 24, Num 1, pp 35-38, issn 0361-5235Article

Integration of a single vertical-cavity surface emitting laser onto a CMOS inverter chipDARYANANI, S; FATHOLLAHNEJAD, H; MATHINE, D. L et al.Electronics Letters. 1995, Vol 31, Num 10, pp 833-834, issn 0013-5194Article

Vertical-cavity surface-emitting lasers integrated onto silicon substrates by PdGe contactsFATHOLLAHNEJAD, H; MATHINE, D. L; DROOPAD, R et al.Electronics Letters. 1994, Vol 30, Num 15, pp 1235-1236, issn 0013-5194Article

A novel optically bistable multiple-quantum-well phase modulatorPARK, C; SHIRALAGI, K. T; DROOPAD, R et al.IEEE photonics technology letters. 1992, Vol 4, Num 11, pp 1225-1227, issn 1041-1135Article

In-situ and ex-situ characterization of GaAs/AlAs quantum well structures using spectroscopic ellipsometryEDWARDS, J. L; MARACAS, G. N; SHIRALGI, K. T et al.Journal of crystal growth. 1992, Vol 120, Num 1-4, pp 78-83, issn 0022-0248Conference Paper

Optical properties of strained asymmetric triangular InGaAs/GaAs multiple quantum wellsDROOPAD, R; CHOI, K. Y; PUECHNER, R. A et al.Applied physics letters. 1991, Vol 59, Num 18, pp 2308-2310, issn 0003-6951Article